There are many papers about lcd in

SPIE Proceedings Vol. 1845

Liquid and Solid State Crystals: Physics, Technology and

Applications Editor(s): Jozef Zmija, Military Academy of Technology,

Warsaw, Poland.

ISBN: 0-8194-1073-X, 576 pages Published 1993 Meeting Date: 10/12 -

10/17/92, Zakopane,

Poland

Abstracts for the papers in this volume are located in this file

immediately

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Contents:

* Fundamental structures and defects in liquid crystals (Paper #:

1845-01)

* Polymer-dispersed liquid-crystal displays: principles,

preparation, properties, and applications (Paper #: 1845-02)

* Semiconductor superlattices: physics, crystallization, and

applications (Paper #: 1845-03)

* New ternary alloy systems for infrared detectors (Paper #:

1845-04)

* Quantum-well infrared optoelectronic devices (Paper #: 1845-05)

* Influence of contacts on infrared photoconductor performance

(Paper #: 1845-06)

* New nontraditional materials for opto- and microelectronics

(Paper #: 1845-07)

* dc and ac small signal electronic transport in ZnTe-ZnSe

structures grown by molecular beam epitaxy (Paper #: 1845-08)

* Strain related to oxygen agglomerates in processed

Czochralski-grown silicon (Paper #: 1845-09)

* Potassium-titanyl-phosphate single crystals: properties and

growth (Paper #: 1845-10)

* X-ray investigation of defects in SrLaAlO4 single crystals

(Paper #: 1845-11)

* New dynamic effect for photochromic materials (Paper #: 1845-12)

* Brillouin scattering in n-ZnSe single crystals with different

free-carrier concentration (Paper #: 1845-13)

* Crystal growth from solution: microgravity, gel, or ground-based

experiments? (Paper #: 1845-14)

* Growth units concentration during crystal growth from solution

(Paper #: 1845-15)

* Temperature dependences of electric permeability and

polarization of copper-acetate-doped TGS ferroelectric single

crystals (Paper #: 1845-16)

* Application of the Lennard-Jones (n,m) potential functions to

rare gas solids in the self-consistent phonon approximation

(Paper #: 1845-17)

* Single-crystal growth and ESR and optical properties of CaNdAlO4

(Paper #: 1845-18)

* Lithium niobate as an effective material for manufacturing of

electro-optic modulators (Paper #: 1845-19)

* Bridgman growth of acenaphthene crystals (Paper #: 1845-20)

* Arsenic diffused p+-n HgCdTe photodiodes (Paper #: 1845-21)

* Influence of mixed gamma-neutron radiation on the transparency

of some photochromic materials (Paper #: 1845-22)

* Dosimetric properties of activated lithium tetraborate (Paper #:

1845-23)

* Electric properties of n-AgInS2 crystals (Paper #: 1845-24)

* Electron-paramagnetic-resonance signals in SrLaAlO4 high-Tc

substrates (Paper #: 1845-25)

* XRD investigation of the nonideal structure of the GaAs(P)/GaAs

superlattice (Paper #: 1845-26)

* Evaluation of strain relaxation in GaAsP/GaAs multilayer

structure grown on misoriented GaAs substrate (Paper #: 1845-27)

* X-ray investigations of the heterogeneous terraced structure in

GaAs(P)/GaAs superlattice (Paper #: 1845-28)

* Investigation of misfit dislocation profiles in ZnSe epilayer on

GaAs substrate by Raman scattering (Paper #: 1845-29)

* Luminescence in MgxZn1-xSe crystals (Paper #: 1845-30)

* Effect of initial trap occupancy on thermally stimulated

currents in insulating crystals (Paper #: 1845-31)

* Determination of the density of deep traps in semiconductors by

using the simultaneous TL/TSC measurement (Paper #: 1845-32)

* Kinetics of trapping and recombination in spatially correlated

systems: numerical studies for linearly varying temperature

(Paper #: 1845-33)

* Study of crystal properties of rare gas solids in terms of the

Singh and Neb potential model (Paper #: 1845-34)

* Increase of limit solubility of solids caused by temperature

gradient (Paper #: 1845-35)

* Relation between growth and nucleation processes and growth

solutions volume (Paper #: 1845-36)

* Interfacial surface tension for crystallization from organic

solutions (Paper #: 1845-37)

* Pierre-Gilles de Gennes: the Nobel Prize in Physics 1991 (Paper

#: 1845-38)

* Marian Miesowicz: 1907-1992 (Paper #: 1845-39)

* Theory of ferroelectric liquid crystals as micropolar medium in

bundle space (Paper #: 1845-40)

* Freedericksz's transition in nematics layer: threshold

conditions and stationary states (Paper #: 1845-41)

* Liquid-crystal materials for STN effect (Paper #: 1845-42)

* Liquid-crystalline paramagnetic Cu(II) complexes of

enaminoketone ligands (Paper #: 1845-43)

* Comparison of mixtures of polar and nonpolar compounds with the

A1 smectic phase (Paper #: 1845-44)

* Phase transition studies of liquid-crystalline polyester by

dielectric relaxation spectroscopy (Paper #: 1845-45)

* X-ray and optical investigations of free suspended films (Paper

#: 1845-46)

* High-pressure studies of liquid crystals (Paper #: 1845-47)

* Dielectric studies of the aggregation of dipolar mesomorphic

molecules (Paper #: 1845-48)

* Diamagnetic anisotropy and splay and bend elastic constants of

4-trans-n-hexyl-cyclohexyl-isothiocyanatobenzene (6CHBT) (Paper

#: 1845-49)

* Odd-even effects and dipole-dipole correlations in the PCH

homologous series (Paper #: 1845-50)

* Low-frequency electrical properties of organic condensed phase:

the case of liquid crystals and liquid-crystalline polymers.

(Paper #: 1845-51)

* Simple method for determination of twist elastic constants in

tilted smectic liquid crystals (Paper #: 1845-52)

* Study of order parameters of dyes oriented in nematic liquid

crystal by UV spectroscopy (Paper #: 1845-53)

* Acoustic waves on liquid crystal: elastic body boundary (Paper

#: 1845-54)

* Liquid-crystal optical elements and devices (Paper #: 1845-55)

* Electro-optic response of a thin liquid-crystal layer in the

pretransitional regime (Paper #: 1845-56)

* Guest-host investigations for black-and-white displays (Paper #:

1845-57)

* Ionic effects in LCDs (Paper #: 1845-58)

* Highly birefringent optical fibers for liquid-crystal logic

systems (Paper #: 1845-59)

* Application of the thermo-optic effect in liquid crystals for

projecting laser displays (Paper #: 1845-60)

* Properties of dynamic holography grating in chiral liquid

crystals (Paper #: 1845-61)

* Usability of thermoplastic polymers to prepare PDLC (Paper #:

1845-62)

* Overview of flat information displays (Paper #: 1845-63)

* Flat active displays for information boards (Paper #: 1845-64)

* Memory effect in ac plasma displays (Paper #: 1845-65)

* Measurement techniques of LC display systems (Paper #: 1845-66)

* Liquid-crystalline properties of

4-halogenobenzylidene-4'-alkoxy-anilines (Paper #: 1845-67)

* Investigation of the smectic layer spacing in the homologous

series of 4-isothiocyanatophenyl 4-(trans-4-alkylcyclohexyl)

benzoates (Paper #: 1845-68)

* Multicomponent nematic mixtures for LCD manufactured from

smectic A compounds (Paper #: 1845-69)

* Enaminoketone mesogens having polar terminal groups (Paper #:

1845-70)

* Liquid-crystalline behavior of the cellulose derivatives

suspended in the photocuring polymer binder (Paper #: 1845-71)

* Comblike organosilicon liquid-crystal polymers (Paper #:

1845-72)

* Investigation of thermo- and photostability of liquid crystals

(Paper #: 1845-73)

* Mesogenic properties of liquid crystals having a chiral

semiflexible joint (Paper #: 1845-74)

* Surface tension of MBBA (Paper #: 1845-75)

* Dielectric relaxation in isotropic phase of mesomorphic n-TPEB's

(Paper #: 1845-76)

* Influence of the orientation mechanism on the nonlinear

dielectric effect in the isotropic phase of nematogens (Paper #:

1845-77)

* Spontaneous polarization of the ferroelectric liquid crystals

smectic C* phase in a wide range of frequencies (Paper #:

1845-78)

* Influence of light-induced molecular conformational

transformation and anchoring energy on the cholesteric

liquid-crystal pitch and dielectric properties (Paper #: 1845-79)

* Dielectric properties of LC mixtures containing ferroelectric

liquid crystals (Paper #: 1845-80)

* Technical aspects of measurement of elastic constants and

diamagnetic anisotropy of nematic liquid crystals (Paper #:

1845-81)

* Elastic constants for 8-OCB (Paper #: 1845-82)

* Application of vibroacoustic method for viscosity measurements

in nematic liquid crystals (Paper #: 1845-83)

* Optical investigation of the vector field of directors in the

boundaried nematic medium under electric and magnetic fields

(Paper #: 1845-84)

* X-ray diffraction study of LC films: generalization of

Moncton-Pindac method for studies of internal diffraction maximum

using reflected beam on thin film with only one free surface

(Paper #: 1845-85)

* Electro-optical properties of poly(vinyl cyclohexanal)-based

PDLC (Paper #: 1845-86)

* Application of lattice model for description of mesogenic

properties of gamma-irradiated cholesterol nonanoate (Paper #:

1845-87)

* Investigations of liquid-crystal display for car dashboards

(Paper #: 1845-88)

* Liquid-crystal light valve with optical retardance control

(Paper #: 1845-89)

* Fiber optic measurement of high hydrostatic pressure with

cholesteric liquid crystals (Paper #: 1845-90)

* Liquid-crystalline nonlinear directional coupler (Paper #:

1845-91)

* Attempt to apply liquid-crystal thermography in prick test

allergy diagnosis (Paper #: 1845-92)

* Dichroic dyes with optical activity (Paper #: 1845-93)

Abstracts:

Paper #: 1845-01

Fundamental structures and defects in liquid crystals, pp.2-15

Author(s): Antoni Adamczyk, Warsaw Univ. of Technology, Warsaw,

Poland.

Abstract: A review is given of our present general classification

of the liquid crystals. The liquid crystal structures

are divided into two main groups: nematic phases with

parallel ordering of the long molecular axes and

smectic phases having additional layered structure. An

interesting phenomenon is that the liquid crystal

phases when formed by optical active molecules develop

chiral modifications: chiral nematics and chiral

smectics. There are four fundamental smectic phases: A,

B, L, and E having skewed analogues: C for smectic A

and F, G, H, (with long molecular axes tilted to the

side of the hexagon) and I, J, K (tilted to the apex of

the hexagon) for smectics B, L, and E, respectively.

Chiral nematics N and chiral modifications of smectics

with weak interlayer correlation (C, I, and F) form

long-range helicoidal structures. We also briefly

discuss the main topological defects in liquid crystal

structures: dislocations in layered (smectic) or

pseudolayered (chiral nematic) phases and disclinations

(including focal domains) that are fundamental defects

of structures with continuous symmetries. !7

Paper #: 1845-02

Polymer-dispersed liquid-crystal displays: principles,

preparation, properties, and applications, pp.16-28

Author(s): Jozef Zmija, Military Technical Academy, Warsaw,

Poland;

Stanislaw J. Klosowicz, Military Technical Academy,

Warsaw, Poland;

Zbigniew Raszewski, Military Technical Academy,

Warsaw, Poland.

Abstract: An overview of preparation methods, physical

principles, main properties, present and possible

applications of polymer dispersed liquid crystals is

presented. Special attention is paid to polymer

dispersed chiral smectic liquid crystals. !22

Paper #: 1845-03

Semiconductor superlattices: physics, crystallization, and

applications, pp.29-50

Author(s): Marian A. Herman, Institute of Physics and OBREP,

Warszawa, Poland.

Abstract: The term `semiconductor superlattice' is usually used

to refer to a periodic structure of thin layers of two

semiconductors along one dimension. The period in

thickness lies typically in the range from several to

tens of nanometers, which is shorter than the electron

mean free path in semiconductors but longer than the

crystal lattice constant. This periodic, or

superlattice potential, modifies significantly the band

structure of the host semiconductors, creating

minizones in wave-vector space and subbands in energy.

In this regard the superlattice can be considered as a

new synthesized semiconductor not present in nature,

which exhibits unusual electronic and optical

properties. The paper presents the fundamentals of the

physics of semiconductor superlattices, as well as the

crystallization methods and the most interesting

application areas of these man-made structures. !26

Paper #: 1845-04

New ternary alloy systems for infrared detectors, pp.52-60

Author(s): Antoni Rogalski, Military Technical Academy,

Warsaw 49, Poland.

Abstract: The emergence of HgCdTe as the most important intrinsic

semiconductor alloy system for IR detectors is well

established. The future of this material continues to

be uncertain because of difficulties associated with

its growth and processing. This paper is to devoted

technology and performance of IR detectors manufactured

from alternative to HgCdTe, new ternary alloy systems,

such as InAsSb, HgZnTe, HgMnTe; and III-V

superlattices, such as AlGaAs/GaAs superlattice

multiple quantum wells. !28

Paper #: 1845-05

Quantum-well infrared optoelectronic devices, pp.61-70

Author(s): Feodor F. Sizov, Institute of Semiconductors, Kiev,

Ukraine;

Antoni Rogalski, Military Technical Academy,

Warsaw 49, Poland.

Abstract: Some physical effects and properties of quantum wells

(QWs) and superlattices (SLs) for IR optoelectronics

are discussed. Recently published results are reviewed.

!85

Paper #: 1845-06

Influence of contacts on infrared photoconductor performance,

pp.71-76

Author(s): Michal Malachowski, Military Technical Academy,

Warsaw 49, Poland;

Alina Jozwikowska, Military Technical Academy,

Warsaw 49, Poland;

Krzysztof Jozwikowski, Military Technical Academy,

Warsaw 49, Poland;

Jozef Piotrowski, VIGO S.A., Warszawa, Poland.

Abstract: The influence of blocking contacts on IR MCT

photoconductor parameters is studied. The photoelectric

gain, current responsivity and detectivity are

investigated by numerical approach. It is shown that

the best performance should be expected in n$PLU@v

devices. !11

Paper #: 1845-07

New nontraditional materials for opto- and microelectronics,

pp.77-84

Author(s): Sergei V. Svechnikov, Institute of Semiconductors,

Kiev 28, Ukraine.

Abstract: Non-traditional materials for solid-state electronics

such as porous silicon, perovskites, electrides,

conducting polymers whose structure imperfections and

peculiar features of the structure are responsible for

their unusual properties, are considered in this paper.

Their distinctive characteristics, features of the

structure, methods of fabrication have been presented.

An outline of their properties and possible

applications in micro- and optoelectronics are

reported. The fundamental character of the cluster

structure is emphasized, as an example, quasicrystals

and fullerens are used. !13

Paper #: 1845-08

dc and ac small signal electronic transport in ZnTe-ZnSe

structures grown by molecular beam epitaxy, pp.85-89

Author(s): W.Bala, N. Copernicus Univ., Torun, Poland.

Abstract: Results of dc and ac small signal electronic transport

study of ZnTe/ZnSe heterostructures grown by molecular

beam epitaxy are presented. The small signal admittance

characteristics of these heterostructures show certain

distinct features which are located at a bias point

dependent on the interfaces. From the bias location of

these features, the interfaces barrier height in

ZnTe/ZnSe heterostructures is found to be 0.6 $POM 0.1

eV for electrons injected into ZnSe. !13

Paper #: 1845-09

Strain related to oxygen agglomerates in processed

Czochralski-grown silicon, pp.90-96

Author(s): Andrzej Misiuk, Institute of Electron Technology,

Warszawa, Poland.

Abstract: Oxygen atoms contained in Czochralski-grown silicon

single crystal (Cz-Si) precipitate at higher

temperatures and produce strain at the oxygen

agglomerate/Si matrix boundary. The strain is

manifested by the changes of lattice constant and x-ray

anomalous transmission values and ought to be taken

into account for Si used as the reference standard.

Hydrostatic pressure treatment applied to the Cz-Si

single crystals makes it possible to obtain better

understanding of the strain related to oxygen

agglomeration. !12

Paper #: 1845-10

Potassium-titanyl-phosphate single crystals: properties and

growth, pp.97-102

Author(s): Tadeusz Lukasiewicz, Military Technical Academy,

Warszawa, Poland.

Abstract: Potassium titanyl phosphate is actually the best

non-linear optical material. Also it's very good

electro-optic coefficients, low dielectric constants

and large figure of merit make it attractive for

practical use. Crystals can be grown by both

hydro-thermal and flux methods. !12

Paper #: 1845-11

X-ray investigation of defects in SrLaAlO4 single crystals,

pp.103-109

Author(s): K.Mazur,

Institute of Electronic Materials Technology,

Warsaw, Poland;

Jerzy Sass,

Institute of Electronic Materials Technology,

Warsaw, Poland;

A.Pajaczkowska,

Institute of Electronic Materials Technology,

Warsaw, Poland.

Abstract: The SrLaAlO$-4$/ single crystals are used as a

substrate for high temperature superconductor epitaxial

layers with uniform physical properties. Good quality

of epitaxial layers requires both crystallographic

perfection and appropriate physical properties of

substrate material. In this paper we investigated the

crystallographic perfection of SrLaAlO$-4$/ crystals by

means of x-ray diffraction topography. The samples were

cut-out perpendicular to $LB@100$RB direction. In some

of the samples the present investigations revealed thin

lamellar volume defects. It was stated at different

interplanar spacing in the defect region. !8

Paper #: 1845-12

New dynamic effect for photochromic materials, pp.110-115

Author(s): Mieczyslaw T. Borowiec, Institute of Physics,

Warsaw, Poland.

Abstract: The thermally stimulated absorption was found for some

photochromic sillenite (BGO:Mo). The effect is

explained in terms of the non-equilibrium processes

between some trap centers and the photochromic

(polaron) one. !6

Paper #: 1845-13

Brillouin scattering in n-ZnSe single crystals with different

free-carrier concentration, pp.116-121

Author(s): M.Drozdowski, Poznan Technical Univ., Poznan,

Poland;

P.Ziobrowski, Poznan Technical Univ., Poznan,

Poland;

M.Kozielski, Poznan Technical Univ., Poznan, Poland;

W.Bala, N. Copernicus Univ., Torun, Poland.

Abstract: We present the influence of the free carrier

concentration on the elastic properties of n-ZnSe

single crystals using Brillouin light scattering

method. For this purpose the Brillouin polarized

spectra of n-ZnSe single crystals with different free

carrier concentration were measured at room

temperature. It has been shown that the value of the

velocity of the elastic waves propagating in n-ZnSe

single crystals strongly depends on the free carriers

concentration. The large effect of the annealing of

n-ZnSe single crystals on their elastic properties is

also discussed. !15

Paper #: 1845-14

Crystal growth from solution: microgravity, gel, or ground-based

experiments?, pp.122-132

Author(s): J.Karniewicz, Technical Univ. of Lodz, Lodz, Poland;

Mariusz J. Krasinski, Technical Univ. of Lodz, Lodz,

Poland.

Abstract: In the paper we consider the sense of making crystal

growth from solution experiments on board space

laboratories. Based on our experimental data and

experiences connected with preparing a facility for a

space laboratory we analyze the possibility of

replacing space experiments by cheaper ground-based

studies and some technical problems appearing during

the preparation of the apparatus for space experiments.

In the end we present construction and experimental

capabilities of the crystal growth from a solution

facility for microgravity conditions research which is

built in the Institute of Physics, Technical University

of Lodz. !21

Paper #: 1845-15

Growth units concentration during crystal growth from solution,

pp.133-141

Author(s): Mirostawa Rak, Technical Univ. of Lodz, Lodz,

Poland.

Abstract: The BCF differential diffusion equation is solved and

the growth units concentration at the surface is found.

The analysis of the growth units concentration

distribution gives information regarding the transport

processes and adsorption phenomena as well as it

indicates that the BCF expression for the growth rate

is strongly limited to low values of supersaturation.

Paper #: 1845-16

Temperature dependences of electric permeability and polarization

of copper-acetate-doped TGS ferroelectric single crystals,

pp.142-146

Author(s): Wladyslaw Proszak, Technical Univ. of Rzeszow,

Rzeszow, Poland.

Abstract: In the paper copper acetate doped single crystal

production technology is presented. Temperature runs of

$epsilon$PRM@, tg$sigma@, Ps, and Ec have been

established. The Curie temperature and Curie-Weiss

constant have also been determined. !9

Paper #: 1845-17

Application of the Lennard-Jones (n,m) potential functions to

rare gas solids in the self-consistent phonon approximation,

pp.147-151

Author(s): C.Malinowska-Adamska, Technical Univ. of Lodz, Lodz,

Poland;

I.Maciejewska, Technical Univ. of Lodz, Lodz,

Poland;

J.Tomaszewski, Technical Univ. of Lodz, Lodz,

Poland.

Abstract: The reduced second-order self-consistent phonon

approximation is applied to the calculations of the

effect of pressure on the instability temperature and

relative displacement of atoms. As the model of

nearest-neighbors central force interaction is used the

Lennard-Jones (n,m) self- consistent potential. The

results of calculations are compared with experimental

and other theoretical data for the anharmonic rare gas

solids. !12

Paper #: 1845-18

Single-crystal growth and ESR and optical properties of CaNdAlO4,

pp.154-160

Author(s): I.Pracka,

Institute of Electronic Materials Technology,

Warsaw, Poland;

W.Giersz,

Institute of Electronic Materials Technology,

Warsaw, Poland;

A.Pajaczkowska,

Institute of Electronic Materials Technology,

Warsaw, Poland;

M.Swirkowicz,

Institute of Electronic Materials Technology,

Warsaw, Poland;

R.Jablonski,

Institute of Electronic Materials Technology,

Warsaw, Poland.

Abstract: In the paper the results of experiments on single

crystal growth of CaNdAlO$-4$/ (CNA) are reported.

CaNdAlO$-4$/ is a very promising material for use as a

substrate for high temperature superconducting (HTSC)

epitaxial layers. The method of preparation of charge

material as well as the conditions of single crystal

growth by the Czochralski method are given. The

equipment type MSR-2 with induction heating made by

Metals Research Ltd., England and the thermal system

with iridium crucible and afterheater were used. The

quality of obtained single crystals was examined by

polarizing methods. Optical transmission in the range

200 - 2000 nm was also measured. Using a newly

developed ESR spin-probing methodology, magnetic

properties of this material were investigated. It

should be pointed out that because of neodymium

presence the material exhibits high paramagnetic

susceptibility. !14

Paper #: 1845-19

Lithium niobate as an effective material for manufacturing of

electro-optic modulators, pp.161-166

Author(s): I.Pracka,

Institute of Electronic Materials Technology,

Warsaw, Poland;

W.Giersz,

Institute of Electronic Materials Technology,

Warsaw, Poland;

M.Swirkowicz,

Institute of Electronic Materials Technology,

Warsaw, Poland;

Z.Luczynski,

Institute of Electronic Materials Technology,

Warsaw, Poland;

Z.Weydmann,

Institute of Electronic Materials Technology,

Warsaw, Poland;

R.Wodnicki, Solaris Optics SA, Warsaw, Poland;

Andrzej L. Bajor,

Institute of Electronic Materials Technology,

Warsaw, Poland.

Abstract: The results of experimental investigations on single

crystal growth of lithium niobate for optical purposes

are reported. The crystals were grown by the

Czochralski method with the use of induction heated

equipment type CGS-2 made by Spexon. The thermal system

consisted of platinum crucible and active platinum

afterheater. To determine the homogeneity and optical

quality of single crystals the distribution of

birefringence and of refractive indices n$- o$/ and

n$-e$/ were measured. Samples of active elements were

prepared and their conoscopic images were checked. On

the basis of these elements the electro-optic

modulators were made for which extinction ratio and

V$-$lambda@/2$/ were measured. Optoelectronic

structures with `cut-off' effect on lithium niobate

substrates were also prepared for straight and Y

waveguides. The waveguides were obtained by Ti

in-diffusion. !9

Paper #: 1845-20

Bridgman growth of acenaphthene crystals, pp.167-170

Author(s): B.Marciniak, Pedagogical Univ. of Czestochowa,

Czestochowa, Poland;

J.Krol, Pedagogical Univ. of Czestochowa,

Czestochowa, Poland;

J.Swiatek, Pedagogical Univ. of Czestochowa,

Czestochowa, Poland.

Abstract: In this paper we propose the optimal growth conditions

for acenaphthene crystals by Bridgman method. !1

Paper #: 1845-21

Arsenic diffused p+-n HgCdTe photodiodes, pp.171-175

Author(s): J.Rutkowska, Military Technical Academy, Warszaw,

Poland;

Antoni Rogalski, Military Technical Academy,

Warsaw 49, Poland;

Jozef Piotrowski, VIGO S.A., Warszawa, Poland;

Jaroslaw Pawluczyk, VIGO S.A., Warsaw, Poland.

Abstract: The p$+$PLU$/-n homojunctions were formed by arsenic

diffusion in the HgCdTe monocrystals and epilayers.

Photodiode performance was established by measuring the

current-voltage and spectral response characteristics.

LWIR photod